| PART |
Description |
Maker |
| RNG132-E |
CLIPLITE
|
Visual Communications Company
Visual Communications C...
|
| HVM12 HVM8 HVM10 HVM14 HVM15 HVM16 HVM5 |
WRAP ID SOCKET .3 SPACE 14PIN 0.35 A, 16000 V, SILICON, SIGNAL DIODE
GAUGE DYNAMOMETER 5-50 GRAMS
WRAP ID SOCKET .3 SPACE 8PIN
WRAP ID SOCKET .4 SPACE 22PIN
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes)
|
RECTRON[Rectron Semiconductor]
|
| HL1PL-AC120V HL1PL-AC240V HL1PL-DC110V HL2H-AC120V |
HL-relay. Space saving power relay. 1 form C. Nominal switching capacity: 15A 125V, 10 A 250 V AC. Coil voltage 120 V AC. Light emitting diode wired, PC board.
HL-relay. Space saving power relay. 1 form C. Nominal switching capacity: 15A 125V, 10 A 250 V AC. Coil voltage 240 V AC. Light emitting diode wired, PC board.
HL-relay. Space saving power relay. 1 form C. Nominal switching capacity: 15A 125V, 10 A 250 V AC. Coil voltage 110 V DC. Light emitting diode wired, PC board.
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Plug-in. Coil voltage 120 V AC.
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Plug-in. Coil voltage 110 V DC.
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Plug-in. Coil voltage 240 V AC.
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. PC board. Coil voltage 120 V AC.
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. PC board. Coil voltage 110 V DC.
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. PC board. Coil voltage 240 V AC.
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Top mounting. Coil voltage 120 V AC.
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Top mounting. Coil voltage 240 V AC.
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Coil voltage 120 V AC. Light emitting diode wired, plug-in.
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Top mounting. Coil voltage 110 V DC.
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Coil voltage 110 V DC. Light emitting diode wired, plug-in.
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Coil voltage 240 V AC. Light emitting diode wired, plug-in.
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Coil voltage 120 V AC. Light emitting diode wired, PC board.
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Coil voltage 240 V AC. Light emitting diode wired, PC board.
HL-relay. Space saving power relay. 1 form C. Nominal switching capacity: 15A 125V AC, 10 A 250 V AC. PC board. Coil voltage 120 V AC.
HL-relay. Space saving power relay. 1 form C. Nominal switching capacity: 15 A 125 V AC, 10 A 250 V AC. Plug-in. Coil voltage 120 V AC.
HL-relay. Space saving power relay. 1 form C. Nominal switching capacity: 15 A 125 V AC, 10 A 250 V AC. Plug-in. Coil voltage 110 V DC.
HL-relay. Space saving power relay. 1 form C. Nominal switching capacity: 15 A 125 V AC, 10 A 250 V AC. Plug-in. Coil voltage 240 V AC.
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Coil voltage 110 V DC. Light emitting diode wired, PC board.
HL-relay. Space saving power relay. 1 form C. Nominal switching capacity: 15A 125V AC, 10 A 250 V AC. Coil voltage 120 V AC. Light emitting diode wired, plug-in.
|
Matsushita Electric Works(Nais)
|
| NX8570SC803-BA NX8570SC997-BA NX8570 NX8570SC303-B |
DIODE ZENER SINGLE 500mW 43Vz 5mA-Izt 0.02 0.05uA-Ir 33 SOD-123 3K/REEL
Single Output LDO, 100mA, Fixed(1.8V), Low Quiescent Current, Over Current Limitation 5-SOT-23 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Single Output LDO, 100mA, Fixed(1.2V), Low Quiescent Current, Over Current Limitation 5-SOT-23 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Single Output LDO, 1.0A, Fixed(1.8V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Dual-Output Low-Dropout (LDO) Voltage Regulators 28-HTSSOP 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Automotive Catalog Ultralow-Power 100-mA Low-Dropout Linear Regulator 5-SOT-23 -40 to 125 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Single Output LDO, 1.0A, Fixed(1.8V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
CONVERTER DC-DC 10W 12V/15V SGL 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Single Output LDO, 1.0A, Fixed(1.5V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Enhanced Product Fast-Transient-Response 1-A Low-Dropout Voltage Regulators 20-HTSSOP -40 to 125 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
CURRENT LIMITER INRSH 10 OHM 20% 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Single Output LDO, 1.0A, Fixed(3.3V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
H8/SLP Series, 38799 Group, 4-ch 14-bit PWM, 2-ch 16-bit TPU, 16-bit AEC, RTC FP-100U; Vcc= 1.8 to 3.6 volts, Temp= -20 to 75 C; Package: PLQP0100KB-A 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Indicator Lamp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
H8/Tiny Series, 36024 Group, WDTO TNP-48; Vcc= 3.0 to 5.5 volts, Temp= -20 to 75 C; Package: PVQN0048KA-A 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR 1 550 nm的连续光源InGaAsP多量子阱激光器激光二极管模块波长显示
Single Output LDO, 1.0A, Fixed(2.8V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125
PTCE 4C 4#20 PIN PLUG
TVS BI-DIR 27V 1500W DO-201
Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:20-39
Single Output LDO, 1.0A, Fixed(2.7V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125
Single Output LDO, 1.0A, Adj.(1.5 to 5.5V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125
Single Output LDO, 100mA, Fixed(2.5V), Low Quiescent Current, Over Current Limitation 5-SOT-23
Single Output LDO, 1.0A, Fixed(5.0V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125
MICRO HDW M2 RoHS Compliant: No
Single Output LDO, 1.0A, Fixed(2.7V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125
CABLE 18/4 STR BC CMR GRY
PTSE 15C 1#16,14#20 PIN PLUG RoHS Compliant: No
Single Output LDO, 1.0A, Adj.(1.5 to 5.5V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125
PTSE 18C 18#20 PIN RECP
Single Output LDO, 1.0A, Fixed(2.5V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125
Single Output LDO, 1.0A, Fixed(3.3V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125
Single Output LDO, 1.0A, Fixed(3.0V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125
Automotive Catalog Fast Transient-Response 1-A Low-Dropout Voltage Regulators 20-HTSSOP -40 to 125
Automotive Catalog Dual-Output Low-Dropout Voltage Regulators 28-HTSSOP -40 to 125
CONVERTER DC-DC 10W 24V/12V SGL
CONVERTER DC-DC 10W 12V/5V SGL
Single Output LDO, 100mA, Adj.(1.2 to 5.5V), Low Quiescent Current, Over Current Limitation 5-SOT-23
Single Output LDO, 1.0A, Fixed(3.0V), Low Quiescent Current, Fast Transient Response 8-SOIC -40 to 125
Single Output LDO, 1.0A, Fixed(5.0V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125
CONNECTOR ACCESSORY
Single Output LDO, 1.0A, Fixed(2.5V), Low Quiescent Current, Fast Transient Response 20-HTSSOP -40 to 125
|
California Eastern Laboratories, Inc.
线性稳
http://
CEL[California Eastern Labs]
|
| 74408943010 |
POWER CHOKE WE-SPC 4838
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
| 74408943470 |
POWER CHOKE WE-SPC 4838
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
| M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M3823 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| NR7500BP NR7500CP-CC NR7500CP-BC NR7500FP-BC NR750 |
InGaAs PIN-PD for 2.5 Gb/s applications. Flat mount flange. GI-50 fiber type. With FC-SPC connector.
InGaAs PIN-PD for 2.5 Gb/s applications. Flat mount flange. GI-50 fiber type. With SC-SPC connector.
InGaAs PIN-PD IN COAXIAL PACKAGE FOR 2.5 Gbp/s APPLICATIONS 铟镓砷的PIN同轴2.5汇评包装帕金 s应用
|
NEC
CALMIRCO[California Micro Devices Corp]
California Micro Devices Corporation
|
| 74408942150 |
WE-SPC SMD Shielded Power Inductor
|
Wurth Elektronik GmbH &...
|
| 74408942047 |
WE-SPC SMD Shielded Power Inductor
|
Wurth Elektronik GmbH &...
|
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